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18665920580
| 型號 | 廠商 | 描述 | 文檔 | 詢價 |
| M95040-DFMN6TP | ST(意法半導(dǎo)體) | IC EEPROM 4KBIT 10MHZ 8SO |  |
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| 11AA080-I/TO | Microchip(美國微芯) | IC EEPROM 8KBIT 100KHZ TO92-3 | |
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| 34LC02-I/ST | Microchip(美國微芯) | IC EEPROM 2KBIT 1MHZ 8TSSOP | |
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| 34LC02-I/MS | Microchip(美國微芯) | IC EEPROM 2KBIT 1MHZ 8MSOP | |
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| 24LC08BT-I/SN | Microchip(美國微芯) | IC EEPROM 8KBIT 400KHZ 8SOIC | |
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| 11LC020-I/P | Microchip(美國微芯) | IC EEPROM 2KBIT 100KHZ 8DIP | |
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| 24LC02BT-I/MNY | Microchip(美國微芯) | IC EEPROM 2KBIT 400KHZ 8TDFN | |
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| 11AA040-I/TO | Microchip(美國微芯) | IC EEPROM 4KBIT 100KHZ TO92-3 | |
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| 24AA01-I/ST | Microchip(美國微芯) | IC EEPROM 1KBIT 400KHZ 8TSSOP | |
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| 93C66BT-I/OT | Microchip(美國微芯) | IC EEPROM 4KBIT 2MHZ SOT23-6 | |
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| 24LC014T-I/OT | Microchip(美國微芯) | IC EEPROM 1KBIT 400KHZ SOT23-6 | |
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| 11LC040-I/SN | Microchip(美國微芯) | IC EEPROM 4KBIT 100KHZ 8SOIC | |
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| 11LC080T-I/TT | Microchip(美國微芯) | IC EEPROM 8KBIT 100KHZ SOT23-3 | |
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| 11AA020-I/TO | Microchip(美國微芯) | IC EEPROM 2KBIT 100KHZ TO92-3 | |
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| M95010-WMN6TP | ST(意法半導(dǎo)體) | IC EEPROM 1KBIT 10MHZ 8SO | |
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| 93LC56AT-I/OT | Microchip(美國微芯) | IC EEPROM 2KBIT 2MHZ SOT23-6 | |
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| 93C56BT-I/OT | Microchip(美國微芯) | IC EEPROM 2KBIT 2MHZ SOT23-6 | |
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| 11AA040T-I/TT | Microchip(美國微芯) | IC EEPROM 4KBIT 100KHZ SOT23-3 | |
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| 11AA020-I/SN | Microchip(美國微芯) | IC EEPROM 2KBIT 100KHZ 8SOIC | |
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| 93LC46BT-I/OT | Microchip(美國微芯) | IC EEPROM 1KBIT 2MHZ SOT23-6 | |
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| RM25C32C-BSNC-B | ADI(亞德諾) | IC SERIAL CBRAM 32KB 8SOIC | |
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| 70T3509MS133BPGI | IDT | IC SRAM 36MBIT 133MHZ 256CABGA | |
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| CY7C1470V25-200BZXC | Cypress(賽普拉斯) | IC SRAM 72MBIT 200MHZ 165FBGA | |
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| 7028L20PFI | IDT | IC SRAM 1MBIT 20NS 100TQFP | |
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| CY7C1412KV18-250BZXC | Cypress(賽普拉斯) | IC SRAM 36MBIT 250MHZ 165FBGA | |
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| DS1245YP-100+ | Maxim(美信) | IC NVSRAM 1MBIT 100NS 34PCM | |
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| 70V261L25PFGI | IDT | IC SRAM 256KBIT 25NS 100TQFP | |
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| DS1245Y-85+ | Maxim(美信) | IC NVSRAM 1MBIT 85NS 32EDIP | |
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| IS43TR16512A-125KBL | ISSI | IC DDR3 SDRAM 8G 933MHZ 96LFBGA | |
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| CY7C107D-10VXI | Cypress(賽普拉斯) | IC SRAM 1MBIT 10NS 28SOJ | |
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| DS1230Y-200IND+ | Maxim(美信) | IC NVSRAM 256KBIT 200NS 28EDIP | |
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| CY7C1313KV18-250BZXI | Cypress(賽普拉斯) | IC SRAM 18MBIT 250MHZ 165FBGA | |
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| 7005L20PFGI | IDT | IC SRAM 64KBIT 20NS 64TQFP | |
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| 7133LA25PFGI | IDT | IC SRAM 32KBIT 25NS 100TQFP | |
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| DS1225AD-70IND+ | Maxim(美信) | IC NVSRAM 64KBIT 70NS 28EDIP | |
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| IS43LR32640A-6BLI | ISSI | IC DDR MOBILE 2GB 166MHZ 90BGA | |
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| THGBMHG8C2LBAIL | Toshiba(東芝) | 32GB NAND JEDEC V5.1 EMBEDDED MU | |
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| CY14B101LA-SZ45XI | Cypress(賽普拉斯) | IC NVSRAM 1MBIT 45NS 32SOIC | |
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| 70V24S55PFG | IDT | IC SRAM 64KBIT 55NS 100TQFP | |
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| IS43TR85120AL-125KBLI | ISSI | IC DDR3 4G 1600MT/S 78BGA | |
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| IS43LR32640A-6BL | ISSI | IC DDR MOBILE 2GB 166MHZ 90BGA | |
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| IS61NLP51236B-200B3LI | ISSI | IC SRAM 18MBIT 200MHZ 165BGA | |
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| IS61LPS51236B-200B3LI | ISSI | IC SRAM 8MBIT 200MHZ 165BGA | |
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| IS43TR85120A-125KBLI | ISSI | IC DDR3 4G 1600MT/S 78BGA | |
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| 71321LA20PFG | IDT | IC SRAM 16KBIT 20NS 64TQFP | |
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| IS61LF102418B-7.5TQLI | ISSI | IC SRAM 18MBIT 7.5NS 100TQFP | |
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| IS61LF51236B-7.5TQLI | ISSI | IC SRAM 18MBIT 7.5NS 100TQFP | |
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| IS61LPS51236B-200TQLI | ISSI | IC SRAM 18MBIT 200MHZ 100TQFP | |
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| IS61NLP102418B-200TQLI | ISSI | IC SRAM 18MBIT 200MHZ 100TQFP | |
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| 71321LA20JG | IDT | IC SRAM 16KBIT 20NS 52PLCC | |
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